Tag : HfO2

New Delhi (The Hawk) : Scientists have developed a memory device with excellent switching characteristics and low-power requirements for data storage applications. Resistive memory devices with insulating film sandwiched between electrodes can address the needs of high-performance, and high-density memories with low power requirements for data storage. They are devices with resistive switching characteristics which refers to the physical phenomena in which a dielectric (electrical insulator that can be polarised by an applied electric current) suddenly changes its (two terminal) resistance under the action of a strong current. Though such devices have been studied intensively to meet the huge technological demands in terms of performance, several technical challenges still persist and pose major challenges to their commercialization. Extensive efforts are being made by scientists to design resistive switching-based memory devices that are non-volatile, reliable, and perform much better than the existing silicon-based flash memory technology. Ms. Swathi S. P. and Dr. S. Angappane from the Centre for Nano and Soft Matter Sciences (CeNS), Bangalore, an autonomous institution of Department of Science and Technology, Govt. of India (DST), have developed a low-power memory device with excellent switching characteristics made from the chemical hafnium oxide, a replacement for silicon oxide, for data storage applications. [https://static.pib.gov.in/WriteReadData/userfiles/image/image0012J7B.png] I-V characteristics of a Al/HfOx/FTO device exhibiting the bipolar resistive switching behavior with low set/reset voltages and currents. Insets show the schematic of the device structure and the switching dynamics.   They have used hafnium oxid ...